NTD110N02R, STD110N02R
175
150
125
10 V
8V
6V
5V
4.5 V
4.2 V
T J = 25 ° C
210
180
150
V DS ≥ 10 V
100
75
4V
3.8 V
3.6 V
120
90
50
3.4 V
3.2 V
3V
60
T J = 175 ° C
T J = 25 ° C
25
0
0
2
4
6
8
2.8 V
2.6 V
2.4 V
10
30
0
0
2
T J = ? 55 ° C
4
6
8
0.03
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
0.014
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.02
I D = 110 A
T J = 25 ° C
0.012
0.01
0.008
0.006
T J = 25 ° C
V GS = 4.5 V
0.01
0.004
0.002
V GS = 10 V
0
2
4
6
8
10
0
20
40
60
80 100 120 140 160 180 200 220 240
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance versus
Gate ? to ? Source Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
2.0
1.8
1.6
I D = 55 A
V GS = 10 V
100,000
10,000
V GS = 0 V
T J = 175 ° C
1.4
1000
1.2
1.0
0.8
100
T J = 100 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
175
10
0
5.0
10
15
20
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
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相关代理商/技术参数
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